![]() ![]() 3102019JC005), and the Joint Research Funds of Department of Science & Technology of Shaanxi Province and Northwestern Polytechnical University (Grant No. 2021ZDLGY14-08), the Fundamental Research Funds for the Central Universities (Grant No. 51872240, and 51911530212), the Shaanxi Province Key Research and Development Program (Grant No. This work was supported by the National Natural Science Foundation of China (Grant Nos. Bomben, A Handbook of X-Ray Photoelectron Spectroscopy, Physical Electronics Division (Perkin-Elmer Corporation, Eden Prairie, 1992). ![]() This study provides a new strategy for improving optoelectronic properties of halide perovskite materials and optimizing the device performance. Compared with the pristine perovskite wires, the GaAs NCs modulated perovskite wires show improved charge carrier transport with the mobility rising from 1.13 to 3.67 cm 2 V −1 s −1, and the resultant PD shows significant improvement in responsivity and detectivity. Taking advantage of the pulsed laser irradiation technique, we successfully fabricate ligand-free GaAs NCs with a size of ∽7 nm and homogeneously embed them in MAPbI 3 perovskite wires through a simple solution-processed synthesis route. Herein, we demonstrate that the charge transport and the consequent photodetection performance of MAPbI 3 perovskite wires can be effectively enhanced by incorporating nanocrystals (NCs) of GaAs-a semiconductor with high charge carrier mobility. However, the performance of the perovskite PDs is generally restricted by the charge carrier transport and extraction efficiency. Solution-processed perovskite wires are attractive candidates for photodetectors (PDs) due to their simple processibility as well as one-dimensional (1D) geometry with desirable charge carrier transport. ![]()
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